Research Article
Hu Yan, Yuta Mochizuki, Toshih
Abstract
Single-walled carbon nanotube (SWCNT) field-effect transistors (FETs) were fabricated on strontium titanate (SrTiO3) substrate through a wet-process by using amide-functionalized SWCNT. The SWCNT-FET exhibited good gate-modulation for drain current at low operating voltages (-3 V). The hole mobility was 0.19 cm2/Vs with an on/ off current ratio of 1.3. After immobilization of prostate-specific-antigen (PSA) antibody the SWCNT-FET clearly responded against the PSA. The drain current at -3 V of both drain and gate voltage almost linearly increased with increasing the concentration of the PSA.