Ezenwa I. A and Ekpunobi A. J
Abstract
Semiconductor lead sulphide (PbS) thin films were deposited on glass substrate using chemical bath deposition method (CBD) at 300K temperature. The preparative conditions such as concentration of ions and deposition time were optimized. Surface morphology and optical characterization were carried out with the help of an Olumpus optical microscope and a Janway 6405 UV-VIS spectrophotometer. Optical investigation showed that, PbS thin film have bandgap energy of 1.90eV and refractive index range of 2.32–2.58. Our results reveals that the thickness of PbS films were dependent on time of growth and concentration of the ions.