Short Article
Waldemar Nawrocki
Abstract
In the paper electric resistance (conductance) and thermal electrical phenomenon of golden and semiconductor nanowires are mentioned. we've analysed and measured nanowires created of gold, copper, tin, Si and element as a result of victimization them for producing of integrated electronic devices. Electrical electrical phenomenon GE and thermal electrical phenomenon GT of a nanostructure describe the result of lepton transport in nanowires. Electrical electrical phenomenon division in nanowires has been determined in units of G0 = 2e2 /h = (12.9)-1 up to 5 quanta of electrical phenomenon in line with in line with projected by Landauer [1]. Within the paper we tend to gift our measurements of electrical electrical phenomenon division in Au nanowires at temperature [2]. The division of thermal electrical phenomenon is taken into account during a similar approach just like the electrical electrical phenomenon. In one-dimension systems ar shaped semiconducting channels.