Review Article
Abasov FP*
Abstract
The possibilities of applying the technology of plasma-chemical deposition of films of a-Si1-xGex: H (x=0 ÷ 1), undoped and doped with PH3 and B2H6, for use in a pin-structure solar cells. The optical, electrical and photoelectric properties, as determined by the amount of hydrogen of the film. We found that the property of the film strongly depends on the composition and level of hydrogenation. The number of hydrogen atoms in the films was varied by changing the composition of the gas mixture and measured the infrared absorption films a-Si:H and a-Ge:H.