Marwa Abdul Muhsien, Ibrahim R
Abstract
Electrical properties of Al- SiO2- P-Si were studied; SiO2 films with different thickness were grown by thermal oxidation (dry oxygen) on p- type silicon surface. I-V characteristic of these capaci tors wee measured at di f ferent temperature (300-100) K with different oxide thickness. C-V measurement for capacitors with thickness (20-50) nm where studied at (100) kHz. As a conclusion the current transport mechanism in the capacitors was believed to be space charge lirhited current at temperature between (300-200) K, at low temperature field ionization happen. Interface states and doping density also calculated from C-V measurement.