Abstract
Zhongchang Wang
Abstract
Semiconductors are currently being investigated as potential candidates for optoelectronic and phase change memory devices. Among several IIIVI semiconductors, In-Se systems are an interesting type of materials due to their multiple phases and excellent optical properties. For example, In2Se3 is a direct bandgap material with a layered structure. There are at least five different phases of In2Se3 (α, β, γ, δ, and κ).